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STM8456
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PRODUCT SUMMARY (N-Channel)
VDSS
40V
PRODUCT SUMMARY (P-Channel)
VDSS
-40V
ID
6.2A
RDS(ON) (m) Max
33 @ VGS=10V
ID
-5.3A
RDS(ON) (m) Max
45 @ VGS=-10V 70 @ VGS=-4.5V
45 @ VGS=4.5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage
a
N-Channel 40 20 TA=25C TA=70C
d
P-Channel -40 20 -5.3 -4.2 -22 16 2 1.28
Units V V A A A mJ W C
Drain Current-Continuous -Pulsed
b
6.2 4.9 25 9
Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25C TA=70C
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
62.5
C/W
Details are subject to change without notice.
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STM8456
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=250uA VDS=32V , VGS=0V
Min
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current
a
40 1 100
uA nA
VGS= 20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=6.2A VGS=4.5V , ID=5.3A VDS=10V , ID=6.2A
1
1.5 26 33 13.8
3 33 45
V m ohm m ohm S
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=20V,VGS=0V f=1.0MHz
580 82 50
pF pF pF
VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=6.2A,VGS=10V VDS=20V,ID=5.3A,VGS=4.5V VDS=20V,ID=6.2A, VGS=10V
11 10.2 17.3 20 11.3 5.8 1.2 2.9
ns ns ns ns nC nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage b VGS=0V,IS=1.3A 0.79 1.2 V
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STM8456
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=-250uA VDS=-32V , VGS=0V
Min
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current
-40 -1 100
uA nA
VGS= 20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=-250uA VGS=-10V , ID=-5.3A VGS=-4.5V , ID=-4.3A VDS=-10V , ID=-5.3A
-1
-1.7 36 52 12
-3 45 70
V m ohm m ohm S
DYNAMIC CHARACTERISTICS CISS COSS CRSS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
c
VDS=-20V,VGS=0V f=1.0MHz
980 135 90 12 17 82 35 20.7 11 1.5 6.2
pF pF pF ns ns ns ns nC nC nC nC
SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD=-20V ID=-1A VGS=-10V RGEN=3.3 ohm VDS=-20V,ID=-5.3A,VGS=-10V VDS=-20V,ID=-4.3A,VGS=-4.5V VDS=-20V,ID=-5.3A, VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage b VGS=0V,IS=-1.3A -0.78 -1.2 V
Notes
_ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,VDD = 20V,Vgs=10V,L=0.5mH.
May,29,2008
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STM8456
Ver 1.0
N-Channel
40
V G S =10V V G S =4.5V V G S =4V
20
ID, Drain Current(A)
24
V G S =3.5V
ID, Drain Current(A)
32
16
12
T j =125 C
-55 C 8 4 0
25 C
16
V G S =3V
8
V G S =2.5V
0
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
72 60
Figure 2. Transfer Characteristics
1.5 1.4 1.3 1.2 1.1 1.0 0.0
V G S =10V ID=6.2A V G S =4.5V ID=5.3A
RDS(on)(m )
48 36 24 12 0
V G S =4.5V
V G S =10V
RDS(on), On-Resistance Normalized
1
8
16
24
32
40
0
25
50
75
100
125
150 T j ( C )
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.2
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50
Vth, Normalized Gate-Source Threshold Voltage
1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75
V DS =V G S ID=250uA
100 125 150
75
100 125 150
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation with Temperature 4
Figure 6. Breakdown Voltage Variation with Temperature
May,29,2008
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STM8456
Ver 1.0
84 70
20.0
RDS(on)(m )
56 125 C 42 28 14 0 75 C 25 C
Is, Source-drain current(A)
ID=6.2A
10.0
125 C 75 C
1.0
25 C
0
2
4
6
8
10
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
1200
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VGS, Gate to Source Voltage(V)
1000
C, Capacitance(pF)
8 6 4 2 0 0
VDS =20V ID=6.2A
800 C is s 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30
2
4
6
8
10
12
14 16
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
200 10
RD
S(
T D(off)
ID, Drain Current(A)
Switching Time(ns)
100 60
Tf
Tr
) ON
L im
it
10 1m
10 0m
10 0u s
us
s
10
T D(on)
1
V G S =10V S ingle P ulse T c=25 C
s
DC
1 1
V DS =20V ,ID=1A V G S =10V
0.1 0.05 60 100 300 600 0.1
6 10
1
10
100
Rg, Gate Resistance()
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
May,29,2008
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STM8456
Ver 1.0
15V
V ( BR )D S S
tp
VDS
L
D R IVE R
RG
20V
D .U .T
IA S tp
+ - VD D
A
0.0 1
IAS
Unclamped Inductive Test Circuit F igure 13a.
Unclamped Inductive Waveforms F igure 13b.
10
Normalized Transient Thermal Resistance
1
0.5 0.2
0.1
P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2
0.1
0.05 0.02 0.01
Single Pulse
0.01 0.00001
0.0001
0.001
0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
10
100
1000
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STM8456
Ver 1.0
P-Channel
25 V G S =-4V V G S =-4.5V
V G S =-8V
20 25 C -55 C
ID, Drain Current(A)
ID, Drain Current(A)
20
16
15
V G S =-10V
12
10
V G S =-3V
8 T j=125 C 4 0
5 0
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
120 100
Figure 2. Transfer Characteristics
1.5 1.4 1.3 1.2 1.1 1.0 0.0
V G S =-4.5V ID=-4.3A V G S =-10V ID=-5.3A
RDS(on)(m )
80 60 40 V G S =-10V 20 0 V G S =-4.5V
RDS(on), On-Resistance Normalized
1
5
10
15
20
25
0
25
50
75
100
125
150
T j ( C )
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
Vth, Normalized Gate-Source Threshold Voltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75
V DS =V G S ID=-250uA
100 125 150
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation with Temperature 7
Figure 6. Breakdown Voltage Variation with Temperature
May,29,2008
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STM8456
Ver 1.0
120 100
20.0
RDS(on)(m )
80 125 C 60 40 20 0 25 C 75 C
Is, Source-drain current(A)
ID=-5.3A
10.0
125 C 75 C
1.0
25 C
0
2
4
6
8
10
0.1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
Figure 8. Body Diode Forward Voltage Variation with Source Current
1200
10
VGS, Gate to Source Voltage(V)
C is s
1000
C, Capacitance(pF)
8 6 4 2 0 0
VDS =-20V ID=-5.3A
800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30
3
6
9
12
15
18
21 24
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
400
T D(off) Tr
Figure 10. Gate Charge
ID, Drain Current(A)
Switching Time(ns)
100 60 10
Tf T D(on)
10
R
D S(
) ON
L im
it
10
1m
10 0u s
us
s
1
V G S =10V S ingle P ulse T c=25 C
10
0m
DC
s
1 1
V DS =-20V ,ID=-1A V G S =-10V
6 10
60 100 300 600
0.1 0.05 0.1
1
10
100
Rg, Gate Resistance()
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
May,29,2008
8
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STM8456
Ver 1.0
15V
V ( BR )D S S
tp
VDS
L
D R IVE R
RG
20V
D .U .T
IA S tp
+ - VD D
A
0.0 1
IAS
Unclamped Inductive Test Circuit F igure 13a.
Unclamped Inductive Waveforms F igure 13b.
10
Normalized Transient Thermal Resistance
1
0.5 0.2 0.1
P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2
0.1
0.05 0.02 0.01
Single Pulse 0.01 0.00001
0.0001
0.001
0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
10
100
1000
May,29,2008
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STM8456
Ver 1.0
PACKAGE OUTLINE DIMENSIONS SO-8
1 L
E D
0.015X45
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
May,29,2008
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STM8456
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1 D1 P2
A
E1 E2
B0
A0
D0
P0
A
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:
PACKAGE SOP 8N 150 A0
6.50 0.15
B0
5.25 0.10
K0
2.10 0.10
D0
1.5 (MIN)
D1
1.55 0.10
E
12.0 +0.3 - 0.1
E1
1.75 0.10
E2
5.5 0.10
E
P0
8.0 0.10
P1
4.0 0.10
P2
2.0 0.10
T
0.30 0.013
SO-8 Reel
W1
S G N
R H W
UNIT:
V
M
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
12.75 + 0.15
K
S
2.0 0.15
G
R
K V
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